Contact structure for a stack DRAM storage capacitor

Details Contact structure for a stack DRAM storage capacitor Contact structure for a stack DRAM storage capacitor

2006-05-24

2008-10-21

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S241000, C438S253000, C438S257000, C438S258000, C257SE21577, C257SE21583

Reexamination Certificate

active

07439125

ABSTRACT:
A method for fabricating a contact structure for a stack storage capacitor includes forming the contact structure in a node contact region with contact openings, an insulating liner and a conductive filling material prior to the patterning of bit lines.

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patent: 43 45 413 (1994-06-01), None
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