Contact structure and associated process for production of semic

Details Contact structure and associated process for production of semic Contact structure and associated process for production of semic

1997-12-29

2000-09-26

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438533, H01L 218247

Patent

active

061241695

ABSTRACT:
A process creates contacts in semiconductor electronic devices and in particular on bit lines of non-volatile memories with cross-point structure. The cross-point structure includes memory cell matrices in which the bit lines are parallel unbroken diffusion strips extending along a column of the matrix with the contacts being provided through associated contact apertures defined through a dielectric layer deposited over a contact region defined on a semiconductor substrate at one end of the bit lines. The process calls for a step of implantation and following diffusion of contact areas provided in the substrate at opposite sides of each bit line to be contacted to widen the area designed to receive the contacts.

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patent: 5420060 (1995-05-01), Gill et al.
patent: 5527727 (1996-06-01), Kim
patent: 5707884 (1998-01-01), Fontana et al.
patent: 5898006 (1999-04-01), Kudoh

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