Contact programmable ROM and method of manufacturing the same

Details Contact programmable ROM and method of manufacturing the same Contact programmable ROM and method of manufacturing the same

1997-09-10

1999-07-20

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257383, 257336, 257763, H01L 2976, H01L 2994

Patent

active

059259175

ABSTRACT:
This invention provides contact programmable ROM which shortens TAT.
The manufacturing process comprises two steps of: (a) a step in which a plurality of memory cells having gate region 14 and source/drain regions 15A and 15B is formed on a semiconductor substrate, the first interlayer insulating layer 20 is formed on the whole surface, the first opening 21 is formed on the first interlayer insulating layer 20 above one source/drain region 15A of each memory cell, metal interconnect material 22 is filled in the first opening 21 to from a contact hole, and the second interlayer insulating layer 23 is formed over the metal interconnect material 22 and first interlayer insulating layer 20, and (b) a step in which the second opening 24 is formed on the second interlayer insulating layer 23 above the contact hole of specified memory cells, and interconnecting layer 25 is connected electrically to the contact hole is formed over the second interlayer insulating layer 23.

REFERENCES:
patent: 4748492 (1988-05-01), Iwase et al.
patent: 5196910 (1993-03-01), Moriuchi et al.
patent: 5233210 (1993-08-01), Kodama
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 5313101 (1994-05-01), Harada et al.
patent: 5357136 (1994-10-01), Yoshioka
patent: 5381046 (1995-01-01), Cederbaum et al.
patent: 5519239 (1996-05-01), Chu

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