Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-30
1999-07-20
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257915, 438595, 438653, H01L 2978
Patent
active
059259183
ABSTRACT:
A process of manufacturing a gate stack is disclosed whereby the integrity of both the gate sidewalls and the substrate surface is maintained. Nitride spacers are constructed on the sidewalls of a gate which has been etched only to the top of the polysilicon layer. This allows more of the polysilicon sidewall to be exposed during subsequent reoxidation while at the same time minimizing effects such as bird's beak resulting during reoxidation. After the nitride spacers are constructed the subsequent etch is performed in two steps in order to minimize degradation of the substrate surface in underlying active regions.
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Pan Pai-Hung
Wu Zhiqiang
Hardy David B.
Micro)n Technology, Inc.
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