Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-19
2006-09-19
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C438S648000, C438S675000, C438S687000, C257S377000, C257S774000
Reexamination Certificate
active
07109109
ABSTRACT:
Disclosed are a contact plug in a semiconductor device and method of forming the same. After a junction region where a contact plug is formed upwardly up to the bottom of a metal wire, the raised junction region and the metal wire are connected by a contact plug. Or after a first contact plug of the same area is formed on the junction region up to the bottom of the metal wires, the first contact plug is connected by a second contact plug. Thus, the width of the contact plug except for some portions is increased by maximum. It is thus possible to prevent an electric field from being concentrated and prohibit on-current from reduced, thus improving the electrical properties of devices.
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Chang Hee Hyun
Shim Sung Bo
Fourson George R.
Garcia Joannie Adelle
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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