Contact plug in semiconductor device and method of forming...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S620000, C438S648000, C438S675000, C438S687000, C257S377000, C257S774000

Reexamination Certificate

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07109109

ABSTRACT:
Disclosed are a contact plug in a semiconductor device and method of forming the same. After a junction region where a contact plug is formed upwardly up to the bottom of a metal wire, the raised junction region and the metal wire are connected by a contact plug. Or after a first contact plug of the same area is formed on the junction region up to the bottom of the metal wires, the first contact plug is connected by a second contact plug. Thus, the width of the contact plug except for some portions is increased by maximum. It is thus possible to prevent an electric field from being concentrated and prohibit on-current from reduced, thus improving the electrical properties of devices.

REFERENCES:
patent: 6143648 (2000-11-01), Rodriguez et al.
patent: 6518173 (2003-02-01), Chan
patent: 6583046 (2003-06-01), Okada et al.
patent: 2003/0160273 (2003-08-01), Hieda
patent: 2003/0209727 (2003-11-01), Ohayashi et al.
patent: 2004/0051127 (2004-03-01), Tanaka
patent: 2004/0051131 (2004-03-01), Miyajima
patent: 2004/0076068 (2004-04-01), Yamada et al.
patent: 2004/0101977 (2004-05-01), Celinska et al.
patent: 100252914 (2000-01-01), None

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