Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-25
2005-10-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000
Reexamination Certificate
active
06958501
ABSTRACT:
A continuous contact hole is formed in an insulation layer that separates a storage capacitor from a switching transistor. All except a section of the contact hole is filled with poly-Si. A conductive, oxidizable interlayer and a conductive oxygen barrier layer are deposited on the Poly-Si in the remaining section of the contact hole such that the interlayer is completely surrounded by the poly-Si of the contact hole, the insulation layer, and the barrier layer.
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Dehm Christine
Mazure-Espejo Carlos
Sitaram Arkalgud
Flynn Nathan J.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Quinto Kevin
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