Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-25
2011-01-25
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S626000
Reexamination Certificate
active
07875547
ABSTRACT:
Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.
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Hsu Ju-Wang
Hsu Peng-Fu
Shieh Jyu-Horng
Su Yi-Nien
Tao Hun-Jan
Duane Morris LLP
Landau Matthew C
Mitchell James M
Taiwan Semiconductor Manufacturing Co. Ltd.
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