Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-08
2008-01-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21077
Reexamination Certificate
active
07316972
ABSTRACT:
A contact hole formation method includes a process of depositing a BPSG film4on a semiconductor substrate1on which transistors are formed, a process of planarizing the BPSG film4, a process of depositing a dielectric film5on the BPSG film4, and a process of forming contact holes8through the BPSG film4and the dielectric film5so as to reach the semiconductor substrate1, in a case in which gate electrodes are densely formed in some areas and sparsely formed in other areas. The above-described contact hole formation method allows a thickness of the BPSG film4to be uniform irrespective of the density of the gate electrodes, whereby an etching rate becomes uniform over the entire area of the semiconductor device. Thus, it is possible to form contact holes having minimized variations in a contact resistance and a value of leakage current.
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Lebentritt Michael
Matsushita Electric - Industrial Co., Ltd.
Stevenson Andre′
Wenderoth , Lind & Ponack, L.L.P.
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