Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-02-14
2010-06-01
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S233000
Reexamination Certificate
active
07727834
ABSTRACT:
A method for manufacturing a semiconductor device may comprise forming a conductive layer on a substrate, removing at least one portion of the conductive layer to form a plurality of separate conductive lines, forming a first stress-inducing layer of a first stress type on the conductive lines and the substrate, and removing a portion of the first stress-inducing layer such that a remaining portion of the first stress-inducing layer is disposed on a first subset of the conductive lines but not a second subset of the conductive lines and has a boundary disposed between two of the conductive lines. This method, along with other methods and various semiconductor devices, are described.
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Banner & Witcoff , Ltd.
Menz Laura M
Toshiba America Electronic Components Inc.
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