Contact clean by remote plasma and repair of silicide surface

Details Contact clean by remote plasma and repair of silicide surface Contact clean by remote plasma and repair of silicide surface

2011-01-11

2011-01-11

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Repair or restoration

C438S658000, C438S906000, C257SE21582, C257SE21483

Reexamination Certificate

active

07867789

ABSTRACT:
Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5205857 (1993-04-01), Yokoyama
patent: 5328558 (1994-07-01), Kawamura
patent: 5500249 (1996-03-01), Telford et al.
patent: 5804499 (1998-09-01), Dehm et al.
patent: 5851926 (1998-12-01), Kumar et al.
patent: 5855681 (1999-01-01), Maydan et al.
patent: 5856240 (1999-01-01), Sinha et al.
patent: 5951776 (1999-09-01), Selyutin et al.
patent: 5970379 (1999-10-01), Chen et al.
patent: 6017809 (2000-01-01), Inumiya et al.
patent: 6022586 (2000-02-01), Hashimoto et al.
patent: 6028002 (2000-02-01), Thakur
patent: 6086677 (2000-07-01), Umotoy et al.
patent: 6238737 (2001-05-01), Chan et al.
patent: 6313033 (2001-11-01), Chiang et al.
patent: 6350320 (2002-02-01), Sherstinsky et al.
patent: 6364954 (2002-04-01), Umotoy et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6562708 (2003-05-01), Hillman et al.
patent: 6706334 (2004-03-01), Kobayashi et al.
patent: 2001/0019737 (2001-09-01), Chan et al.
patent: 2002/0006722 (2002-01-01), Thakur
patent: 2004/0183146 (2004-09-01), Hokazono et al.
patent: 2005/0205110 (2005-09-01), Kao et al.
patent: 2005/0218507 (2005-10-01), Kao et al.
patent: 2005/0221552 (2005-10-01), Kao et al.
patent: 2005/0230350 (2005-10-01), Kao et al.
patent: 2005/0236715 (2005-10-01), Ku et al.
patent: 2006/0021702 (2006-02-01), Kumar et al.
patent: 2006/0024959 (2006-02-01), Li et al.
patent: 2006/0060920 (2006-03-01), Paranjpe et al.
patent: 2006/0154493 (2006-07-01), Arghavani et al.
patent: 2005-093909 (2005-04-01), None
Translation of JP 2005-093909 A, Kobayashi et al ( May 18, 2010).
“The Doping of Semiconductors,” http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html. Mar. 29, 2005.
Sze. VLSI Technology, McGraw-Hill Book Company, 3 pages, 1987.

Affiliated with

Also associated with

Rating

Contact clean by remote plasma and repair of silicide surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact clean by remote plasma and repair of silicide surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact clean by remote plasma and repair of silicide surface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2627471