Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-03-11
2011-10-04
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S299000, C438S655000, C438S630000, C438S721000, C438S755000, C257SE21593, C257SE21619
Reexamination Certificate
active
08030210
ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a source/drain region adjacent the gate dielectric; a silicide region on the source/drain region; a metal layer on top of, and physical contacting, the silicide region; an inter-layer dielectric (ILD) over the metal layer; and a contact opening in the ILD. The metal layer is exposed through the contact opening. The metal layer further extends under the ILD. The semiconductor structure further includes a contact in the contact opening.
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Ke Chung-Hu
Lee Wen-Chin
Wang Ching-Ya
Liu Benjamin Tzu-Hung
Ngo Ngan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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