Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Patent
1995-07-26
1997-07-15
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
257737, 257767, 257780, 257781, 257915, H01L 2348
Patent
active
056486863
ABSTRACT:
An Al layer which serves as a lead-out electrode is formed on a semiconductor chip. An insulating layer is formed on the semiconductor chip and the Al layer. The insulating layer has an opening formed in that portion thereof which is located on the Al layer, thereby exposing a portion of the Al layer. A multi-level metal layer (barrier metal layer) is formed on the exposed portion of the Al layer and on that portion of the insulating layer which is located along the edge of the opening. A metallic nitride region is provided between a first-level metal layer in the multi-level metal layer and the insulating layer so as to be selectively formed at or under a peripheral portion of the first-level metal layer. A bump electrode is provided on the multi-level metal layer. The resultant semiconductor device is mounted on a circuit board by flip chip bonding, with the bump electrode interposed therebetween.
Doi Kazuhide
Hirano Naohiko
Hiruta Yoichi
Miura Masayuki
Okada Takashi
Arroyo T. M.
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
LandOfFree
Connecting electrode portion in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Connecting electrode portion in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Connecting electrode portion in semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1494721