Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2008-03-04
2011-12-20
Olsen, Allan (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S067000
Reexamination Certificate
active
08080168
ABSTRACT:
A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted. In one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.
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Lam Research Corporation
Martine Penilla Group LLP
Olsen Allan
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