Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2006-03-07
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C361S305000, C361S303000
Reexamination Certificate
active
07008838
ABSTRACT:
A modified capacitor for replacing an unmodified capacitor includes two unmodified metallized strips, each supported by an unmodified dielectric film arrangement that is made up of two dielectric films. Each unmodified metallized strip has an elongated length and includes an unmodified active region and a lengthwise unmodified, heavy-edge region. The two dielectric films are wound together to form a roll having opposing ends such that the lengthwise unmodified, heavy-edge region of each unmodified metallized strip cooperate in forming the opposing ends for external electrical connection thereto. The unmodified capacitor exhibits a given value of pulse current tolerance. The modified capacitor includes first and second modified metallized strips, each including a modified active region electrically cooperating with a modified, heavy-edge region, to produce a modified value of pulse current tolerance in the modified capacitor that is greater than the given value of pulse current tolerance in an unmodified capacitor.
REFERENCES:
patent: 5610796 (1997-03-01), Lavene
patent: 5696663 (1997-12-01), Unami et al.
Hosking Terry
Kennedy Kenneth
Le Thao P.
Pritzkau Michael
SBE Inc.
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