Configuration and method to form MOSFET devices with low...

Details Configuration and method to form MOSFET devices with low... Configuration and method to form MOSFET devices with low...

2006-01-24

2010-11-09

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29118

Reexamination Certificate

active

07829941

ABSTRACT:
A novel integration scheme for forming power MOSFET, particularly forming salicides for both gate and mesa contact regions, as well as using multiple energy contact implants through the salicided layer to form conductive body contacts which short to the source region by the salicides.

REFERENCES:
patent: 2005/0173760 (2005-08-01), Spring
patent: 2006/0071268 (2006-04-01), Tai et al.

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