Plasma-enhanced pulsed deposition of metal carbide films

Coating processes – Coating by vapor – gas – or smoke – Carbon or carbide coating

Reexamination Certificate

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C427S535000, C427S569000

Reexamination Certificate

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07666474

ABSTRACT:
Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.

REFERENCES:
patent: 3708728 (1973-01-01), Sterling et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4085430 (1978-04-01), Gerkema et al.
patent: 4282267 (1981-08-01), Kuyel
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4565747 (1986-01-01), Nakae et al.
patent: 4747367 (1988-05-01), Posa
patent: 4761269 (1988-08-01), Conger et al.
patent: 4767494 (1988-08-01), Kobayashi et al.
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5071670 (1991-12-01), Kelly
patent: 5166092 (1992-11-01), Mochizuki et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5306666 (1994-04-01), Izumi
patent: 5316793 (1994-05-01), Wallace et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5382333 (1995-01-01), Ando et al.
patent: 5438028 (1995-08-01), Weissman et al.
patent: 5443647 (1995-08-01), Aucoin et al.
patent: 5595784 (1997-01-01), Kaim et al.
patent: 5603771 (1997-02-01), Seiberras et al.
patent: 5618395 (1997-04-01), Gartner
patent: 5691235 (1997-11-01), Meikle et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5723384 (1998-03-01), Park et al.
patent: 5744254 (1998-04-01), Kampe et al.
patent: 5769950 (1998-06-01), Takasu et al.
patent: 5789024 (1998-08-01), Levy et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 5915004 (1999-06-01), Pabbati et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5946598 (1999-08-01), Yeh
patent: 5961365 (1999-10-01), Lambert
patent: 5964943 (1999-10-01), Stein et al.
patent: 5965004 (1999-10-01), Cowley et al.
patent: 5972430 (1999-10-01), DiMeo et al.
patent: 5973400 (1999-10-01), Murakami et al.
patent: 6006763 (1999-12-01), Mori et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6087257 (2000-07-01), Park et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6104074 (2000-08-01), Chen
patent: 6113977 (2000-09-01), Soininen et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6162501 (2000-12-01), Kim
patent: 6188134 (2001-02-01), Stumborg et al.
patent: 6200389 (2001-03-01), Miller et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6234646 (2001-05-01), Ito
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6380627 (2002-04-01), Weihs et al.
patent: 6416577 (2002-07-01), Suntola et al.
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6511539 (2003-01-01), Raaijmakers et al.
patent: 6534395 (2003-03-01), Werkhoven
patent: 6576053 (2003-06-01), Kim et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6616982 (2003-09-01), Merrill et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6706115 (2004-03-01), Leskela et al.
patent: 6727169 (2004-04-01), Saanila et al.
patent: 6794287 (2004-09-01), Saanila et al.
patent: 6797340 (2004-09-01), Fang et al.
patent: 6800383 (2004-10-01), Lakhotkin
patent: 6800552 (2004-10-01), Elers et al.
patent: 6809026 (2004-10-01), Yoon et al.
patent: 6821889 (2004-11-01), Elers et al.
patent: 6827978 (2004-12-01), Yoon et al.
patent: 6833161 (2004-12-01), Wang et al.
patent: 6863727 (2005-03-01), Elers et al.
patent: 6986914 (2006-01-01), Elers et al.
patent: 7138336 (2006-11-01), Lee et al.
patent: 7211144 (2007-05-01), Lu et al.
patent: 7268078 (2007-09-01), Iyer
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0104126 (2003-06-01), Fang et al.
patent: 2003/0123216 (2003-07-01), Yoon et al.
patent: 2003/0127043 (2003-07-01), Lu et al.
patent: 2003/0153181 (2003-08-01), Yoon et al.
patent: 2003/0157760 (2003-08-01), Xi et al.
patent: 2003/0161952 (2003-08-01), Wang et al.
patent: 2003/0181035 (2003-09-01), Yoon et al.
patent: 2003/0194825 (2003-10-01), Law et al.
patent: 2003/0203616 (2003-10-01), Chung et al.
patent: 2004/0206008 (2004-10-01), Sung
patent: 2004/0208994 (2004-10-01), Harkonen et al.
patent: 2005/0106877 (2005-05-01), Elers et al.
patent: 2006/0019494 (2006-01-01), Cao et al.
patent: 2006/0079090 (2006-04-01), Elers et al.
patent: 2006/0147626 (2006-07-01), Blomberg
patent: 2006/0211224 (2006-09-01), Matsuda et al.
patent: 2006/0220249 (2006-10-01), Johnston et al.
patent: 2006/0251812 (2006-11-01), Kang et al.
patent: 2007/0069177 (2007-03-01), Peters et al.
patent: 2007/0148350 (2007-06-01), Rahtu et al.
patent: 2008/0102204 (2008-05-01), Elers
patent: 2008/0102205 (2008-05-01), Barry et al.
patent: 0 387 403 (1990-09-01), None
patent: 0 394 054 (1990-10-01), None
patent: 0 442 490 (1991-08-01), None
patent: 0528779 (1993-02-01), None
patent: 0528779 (1993-02-01), None
patent: 0 573 033 (1993-12-01), None
patent: 0526779 (1995-10-01), None
patent: 0 774 533 (1997-05-01), None
patent: 0899779 (1999-03-01), None
patent: 0899779 (1999-03-01), None
patent: 1 158 070 (2001-11-01), None
patent: 1 167 567 (2002-01-01), None
patent: 6037041 (1994-02-01), None
patent: 6069157 (1994-03-01), None
patent: 7230957 (1995-08-01), None
patent: 8264530 (1996-10-01), None
patent: 09 087857 (1997-03-01), None
patent: 2001-88044 (2001-12-01), None
patent: 2002-31160 (2002-06-01), None
patent: 2002-87192 (2002-12-01), None
patent: 2003-5727 (2003-01-01), None
patent: 2003-14115 (2003-03-01), None
patent: 2003-14117 (2003-03-01), None
patent: 2003-33234 (2003-05-01), None
patent: 2003-40758 (2003-06-01), None
patent: WO 96/17107 (1996-06-01), None
patent: WO 96/18756 (1996-06-01), None
patent: WO 98/51838 (1998-11-01), None
patent: WO 99/37655 (1999-07-01), None
patent: WO 00/01006 (2000-01-01), None
patent: WO 00/47796 (2000-08-01), None
patent: WO 00/54320 (2000-09-01), None
patent: WO 00/63957 (2000-10-01), None
patent: WO 01/27347 (2001-04-01), None
patent: WO 01/29280 (2001-04-01), None
patent: WO 01/29891 (2001-04-01), None
patent: WO 01/29893 (2001-04-01), None
patent: WO 01/53565 (2001-07-01), None
patent: WO 01/66832 (2001-09-01), None
patent: WO 01/78123 (2001-10-01), None
patent: WO 01/78213 (2001-10-01), None
patent: WO 01/88972 (2001-11-01), None
patent: WO 2004/077515 (2004-09-01), None
patent: WO 2006/080782 (2006-08-01), None
1988RD-0296076 (Nov. 20, 1998) “Field effect transistor structure with improved transconductant—contg. spacer-less conducting gate oxide, and tungsten deposited on source and drain,” Sep. 19, 2005, East Version 2.0.1.4 Patent-Assignee: Anonymous[Anon].
Andricacos et al., “Damascene copper electroplating for chip,”IBM Jour. Research and Dev.,42:567 (1998).
Bain et al., “Deposition of tungsten by plasma enhanced chemical vapour deposition,”J. Phys. IV France,vol. 9, pp. 827-833 (1999).
Chang et al., “Chemical vapor deposition of tantalum carbide and carbonitride thin film from Me3CE=Ta(CH2CMe3)3(E = Ch, N),”The Royal Society of Chemistry(2003), pp. 365-369.
Elers et al., “NbC15 as a precursor in atomic layer epitaxy,”Applied Surface Science,82/83:468-474 (1994).
Favis et al., “Atomic layer epitaxy of silicon,

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