Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-03-27
2011-10-04
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S322000, C257SE21611
Reexamination Certificate
active
08030151
ABSTRACT:
A bipolar transistor (101) has a base (243) formed with an intrinsic base portion (2431), a base contact portion (245C), and a base link portion (243L) that extends between the intrinsic base portion and the base contact portion. An isolating dielectric layer (267-1 or 267-2) is provided above the base link portion. The length of the base link portion is determined, and thereby controlled, with a lateral spacing portion (269-1 or 269-2) of largely non-monocrystalline semiconductor material, preferably polycrystalline semiconductor material, provided on the dielectric layer above the base link portion. The lateral spacing portion is typically provided as part of a layer of non-monocrystalline semiconductor material used in the gate electrode of an insulated-gate field-effect transistor.
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Bulucea Constantin
Yang Jeng-Jiun
Meetin Ronald J.
National Semiconductor Corporation
Patton Paul E
Smith Zandra
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