Conductor-dielectric structure and method for fabricating

Details Conductor-dielectric structure and method for fabricating Conductor-dielectric structure and method for fabricating

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S426000, C438S637000, C438S642000, C438S778000

Reexamination Certificate

active

07960276

ABSTRACT:
A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature.

REFERENCES:
patent: 5567300 (1996-10-01), Datta et al.
patent: 6171467 (2001-01-01), Weihs et al.
patent: 6495443 (2002-12-01), Lopatin et al.
patent: 6709565 (2004-03-01), Mayer et al.
patent: 6848977 (2005-02-01), Cook et al.
patent: 2005/0092399 (2005-05-01), Ronay

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