Conductive spacers extended floating gates

Details Conductive spacers extended floating gates Conductive spacers extended floating gates

2003-06-12

2008-08-26

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000

Reexamination Certificate

active

07416939

ABSTRACT:
A method for manufacturing on a substrate (24) a semiconductor device with improved floating-gate to control-gate coupling ratio is described. The method comprises the steps of first forming an isolation zone (22) in the substrate (24), thereafter forming the floating gate (28) on the substrate (24), thereafter extending the floating gate (28) using polysilicon spacers (40), and thereafter forming the control gate (44) over the floating gate (28) and the polysilicon spacers (40). Such a semiconductor device may be used in flash memory cells or EEPROMs.

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