Conductive memory device with conductive oxide electrodes

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S421000, C257SE27006

Reexamination Certificate

active

07067862

ABSTRACT:
A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even an adhesion layer and a sacrificial layer.

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