Conductive memory array having page mode and burst mode read...

Details Conductive memory array having page mode and burst mode read... Conductive memory array having page mode and burst mode read...

2006-08-22

2006-08-22

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S207000, C365S158000

Reexamination Certificate

active

07095644

ABSTRACT:
Conductive memory array having page mode and burst mode read capability. The conductive memory array includes two-terminal memory plugs and sensing circuits configured to read information from the memory plugs in two cycles. The array also includes associated circuitry that allows it to carry out such two-cycle reads in either page mode or burst mode.

REFERENCES:
patent: 5023844 (1991-06-01), Arnold et al.
patent: 5293350 (1994-03-01), Kim et al.
patent: 6108243 (2000-08-01), Suzuki et al.
patent: 6256247 (2001-07-01), Perner
patent: 6487106 (2002-11-01), Kozicki
patent: 6633509 (2003-10-01), Scheuerlein et al.
patent: 6687147 (2004-02-01), Fricke et al.
patent: 6711045 (2004-03-01), Fricke et al.
patent: 6807088 (2004-10-01), Tsuchida
patent: 6839269 (2005-01-01), Iwata et al.
patent: 6927430 (2005-08-01), Hsu
patent: 2002/0186593 (2002-12-01), Takano et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2003/0146776 (2003-08-01), Nakase
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2004/0257852 (2004-12-01), Yamamura
patent: 2005/0135147 (2005-06-01), Rinerson et al.
Gerstner et al., “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”, 1998, Journal of Applied Physics, vol. 84, No. 10, pp. 5647-5651.
Simmons et al., “New conduction and reversible memory phenomena in thin insulating films”, 1967, Proc. Roy. Soc. A., vol. 301, pp. 77-102.
U.S. Appl. No. 10/745,178, filed Dec. 22, 2003, Rinderson et al.
Office Action Mailed Sep. 12, 2005 for U.S. Appl. No. 10/745,178 ; Pham, Ly D ; Art Unit 2827.
Office Action Mailed Mar. 20, 2006 for U.S. Appl. No. 10/745,178 ; Pham, Ly D ; Art Unit 2827.
Applicants Response to Office Action Mailed Sep. 12, 2005 for U.S. Appl. No. 10/745,178 ; Pham, Ly D ; Art Unit 2827.
Applicants Response to Office Action Mailed Mar. 20, 2006 for U.S. Appl. No. 10/745,178 ; Pham, Ly D ; Art Unit 2827.

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