Conductive material adhesion enhancement in damascene process fo

Details Conductive material adhesion enhancement in damascene process fo Conductive material adhesion enhancement in damascene process fo

1999-04-29

2000-08-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438592, 438595, 438626, 438628, 438633, H01L 2100

Patent

active

061071854

ABSTRACT:
A method for manufacturing an integrated circuit using damascene processes is provided in which dielectric surfaces subject to chemical-mechanical polishing are roughened after polishing to increase the surface area to provide more surface for chemical and mechanical bonding of subsequent layers.

REFERENCES:
patent: 5334284 (1994-08-01), Ngo

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