Conductive layers for hafnium silicon oxynitride films

Details Conductive layers for hafnium silicon oxynitride films Conductive layers for hafnium silicon oxynitride films

2010-05-03

2011-11-29

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S761000, C257SE27084, C438S706000, C438S785000

Reexamination Certificate

active

08067794

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film may be structured as one or more monolayers. Electrodes to a dielectric containing a HfSiON may be structured as one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum.

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