Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-14
2006-11-14
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S584000
Reexamination Certificate
active
07135394
ABSTRACT:
Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (<200° C.)
REFERENCES:
patent: 6036889 (2000-03-01), Kydd
patent: 2004/0076562 (2004-04-01), Manzanec et al.
patent: WO 99/43728 (1999-09-01), None
Houng Ying-Chang
Lin Hong-Ching
Shih Chi-Jen
Shih Shao-Ju
Dang Phuc T.
Industrial Technology Research Institute
Thomas Kayden Horstemeyer & Risley
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