Conductive diffusion barrier of titanium nitride in ohmic contac

Details Conductive diffusion barrier of titanium nitride in ohmic contac Conductive diffusion barrier of titanium nitride in ohmic contac

1992-08-14

1994-11-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

257 47, 257783, 257915, H01L 2974, H01L 2946, H01L 23485

Patent

active

053693043

ABSTRACT:
A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13, 14). The titanium nitride layer (17) substantially prevents dopants from diffusing into the titanium nitride ( 17 ) and subsequently counterdoping the doped areas (12, 13, 14) during subsequent high temperature processing operations.

REFERENCES:
patent: 4827363 (1989-05-01), Thomas et al.
patent: 5004705 (1991-04-01), Blackstone
patent: 5183769 (1993-02-01), Rutter et al.

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