Conductive contact plug and a method of forming a conductive con

Details Conductive contact plug and a method of forming a conductive con Conductive contact plug and a method of forming a conductive con

1991-06-10

1992-06-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156656, 156657, 1566591, 21912166, 357 71, 427 531, 437190, 437192, 437194, 437228, B44C 122, C03C 1500, C23F 100, H01L 2348

Patent

active

051247801

ABSTRACT:
The invention is a method of forming a conductive contact plug and an interconnect line independent of each other. The contact plug is formed using laser planarization and a blanket etch back. The invention is also the contact plug thus formed. The contact plug and interconnect line may be fabricated with conductive materials having substantially similar methods of deposition. The integrity of the contact plug is enhanced using laser planarization.
The process begins with a wafer having a dielectric layer, the upper surface of which has been planarized. A masking step defines a contact hole. An etch creates the contact hole which passes through the dielectric layer to a conductive region where contact is to be made. A first layer of conductive material is then deposited overlying the dielectric layer. A layer of material having an anti-reflective coating (ARC) (or a layer of material having a higher boiling point than the first layer) is deposited overlying the first layer. The ARC enhances the fluidity of the first layer during a subsequent laser planarization. The first layer and ARC overlying the dielectric are then laser planarized. The laser planarization is followed by a blanket etch of the first layer and ARC. The etch forms a contact plug substantially coplanar with the surface of the dielectric layer. At this juncture a second layer of conductive material may be deposited and masked to form interconnect lines for joining contact plugs.

REFERENCES:
patent: 4888087 (1989-12-01), Moslehi et al.
patent: 4936950 (1990-06-01), Doan et al.
patent: 4981550 (1991-01-01), Huttemann et al.
patent: 4997518 (1991-03-01), Madokoro
Doan et al., "A Novel Submicron AL Contact Filling Technology for ULSI Metallization," Eighth Internation VLSI Multi-Layer Interconnection Conference, Jun. 11 1991.

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