Computer system, memory structure and structure for...

Details Computer system, memory structure and structure for... Computer system, memory structure and structure for...

2007-01-09

2007-01-09

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000

Reexamination Certificate

active

10840173

ABSTRACT:
A computer system comprising: (A) a CPU; (B) a memory arrangement comprising: (i) a side-wall memory array including a plurality of side-wall memory transistors; (ii) a charge pump; (iii) a plurality of switching circuits; and (iv) logic circuitry; and (C) a system bus, wherein each of the side-wall memory transistors comprises: a gate electrode formed on a semiconductor layer with a gate insulating film formed on the semiconductor layer; a channel region formed below the gate electrode; a pair of diffusion regions formed on the both sides of the channel region and having a conductive type opposite to that of the channel region; and a pair of memory functional units formed on the both sides of the gate electrode and having a function of retaining charges.

REFERENCES:
patent: 5537350 (1996-07-01), Larsen et al.
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 2002/0040992 (2002-04-01), Manabe et al.
patent: 2003/0164517 (2003-09-01), Kamei et al.
patent: 2004/0233717 (2004-11-01), Morikawa et al.
patent: 05-304277 (1993-11-01), None

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