Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-10
2005-05-10
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S479000, C438S493000, C438S495000, C438S938000, C427S255270, C427S255310, C117S070000, C117S090000
Reexamination Certificate
active
06890816
ABSTRACT:
High quality epitaxial layers of monocrystalline perovskite materials (18) can be grown overlying monocrystalline substrates (12) such as gallium arsenide wafers by forming a metal template layer (16) on the monocrystalline substrate. The structure includes a metal-containing layer (16) to mitigate unwanted oxidation of underlying layers and a low-temperature seed layer (19) that prevents degradation of an epitaxial layer (14) during growth of the perovskite layer (18).
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Droopad Ravindranath
Liang Yong
Freescale Semiconductor Inc.
Rrao Shrinivas
Weiss Howard
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