Static information storage and retrieval – Read/write circuit – Precharge
Patent
1995-05-25
1997-02-18
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Precharge
36518909, 36518911, G11C 700
Patent
active
056047045
ABSTRACT:
A compound semiconductor static random access memory device has a precharge driving circuit for producing a precharge driving signal n-channel enhancement type compound semiconductor field effect transistors responsive to the precharge driving signal for charging bit lines to a positive power voltage level, and the precharge driving circuit bootstraps the precharge driving signal over the positive power voltage level so as to rapidly complete the precharging operation without sacrifice of stability of the read-out and write-in operations.
REFERENCES:
patent: 4878201 (1989-10-01), Nakaizumi
patent: 4943952 (1990-07-01), Terayama
patent: 5305259 (1994-04-01), Kim
S. Aizaki, et al., "A 15-ns 4-Mb CMOS SRAM", EIII Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990.
Le Vu A.
NEC Corporation
Nelms David C.
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