Compound semiconductor static random access memory device equipp

Static information storage and retrieval – Read/write circuit – Precharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518909, 36518911, G11C 700

Patent

active

056047045

ABSTRACT:
A compound semiconductor static random access memory device has a precharge driving circuit for producing a precharge driving signal n-channel enhancement type compound semiconductor field effect transistors responsive to the precharge driving signal for charging bit lines to a positive power voltage level, and the precharge driving circuit bootstraps the precharge driving signal over the positive power voltage level so as to rapidly complete the precharging operation without sacrifice of stability of the read-out and write-in operations.

REFERENCES:
patent: 4878201 (1989-10-01), Nakaizumi
patent: 4943952 (1990-07-01), Terayama
patent: 5305259 (1994-04-01), Kim
S. Aizaki, et al., "A 15-ns 4-Mb CMOS SRAM", EIII Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Compound semiconductor static random access memory device equipp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor static random access memory device equipp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor static random access memory device equipp will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1606945

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.