Compound semiconductor memory device having redundant circuit co

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 95, 36518901, 365 96, G11C 1300

Patent

active

049858661

ABSTRACT:
A compound semiconductor memory device having a redundancy configuration is disclosed. A fuse element to reject and replace a defective word line series is formed between a load transistor and a power voltage line in the primary decoder, and the word line is connected to the decoder without fuse element.

REFERENCES:
patent: 4885720 (1989-12-01), Miller et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Compound semiconductor memory device having redundant circuit co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor memory device having redundant circuit co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor memory device having redundant circuit co will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-60085

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.