Compound semiconductor material and method for forming an...

Details Compound semiconductor material and method for forming an... Compound semiconductor material and method for forming an...

2006-07-20

2010-02-23

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S499000, C438S502000, C438S151000, C438S158000, C438S159000, C257SE29094, C257SE29098, C257SE29296, C257SE21411, C257SE21700

Reexamination Certificate

active

07666764

ABSTRACT:
A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

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