Compound semiconductor device and its manufacture

Details Compound semiconductor device and its manufacture Compound semiconductor device and its manufacture

2006-10-03

2008-08-05

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S022000, C438S167000, C438S592000, C438S602000, C257S192000, C257S192000, C257S194000, C257S195000, C257S200000, C257SE21047

Reexamination Certificate

active

07407859

ABSTRACT:
A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0<q (1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and forming a Schottky contact; recesses formed on both sides of the gate electrode on source and drain sides by at least partially removing the cap layer, the recesses having a bottom surface of a roughness larger than a roughness of a surface of the cap layer under the gate electrode; a source electrode disposed on the bottom surface of the recess on the source side; and a drain electrode disposed on the bottom surface of the recess on the drain side.

REFERENCES:
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Japanese Office Action dated Nov. 6, 2007 with English translation.

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