Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-07-18
1995-11-07
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117103, 117951, 117 93, 437100, H01L 2120
Patent
active
054639786
ABSTRACT:
A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
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Larkin David J.
Matus Lawrence G.
Neudeck Philip G.
Powell J. Anthony
Breneman R. Bruce
Fleck Linda J.
Ohio Aerospace Institute
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