Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-11-06
1998-01-20
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 97, 437100, C30B 2308
Patent
active
057097453
ABSTRACT:
A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
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Larkin David J.
Matus Lawrence G.
Neudeck Philip G.
Powell J. Anthony
Garrett Felisa
Ohio Aerospace Institute
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