Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-08-13
1998-06-09
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, 257384, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057639230
ABSTRACT:
A novel compound PVD target material, suitable for use in the fabrication of cobalt silicide layers on semiconductor devices is disclosed. The compound material is formed by blending an amount of SiO.sub.z with an amount of CoSi.sub.x to form a blended compound material CoSi.sub.x O.sub.y and then compressing and shaping said blended compound material in a hot powder press into an appropriate shape for use in a PVD sputtering chamber. A polysilicon MOSFET gate stack structure and a source/drain salicide structure incorporating the CoSi.sub.X O.sub.y, compound material are described. The addition of a small amount of oxide to the cobalt silicide, when sputter deposited, results in an as-deposited film of CoSi.sub.x O.sub.y having smaller grain size and significantly enhanced thermal stability over conventional CoSi.sub.x, and other characteristics desirable in the fabrication of salicide MOSFET structures.
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patent: 4807015 (1989-02-01), Robayashi et al.
patent: 5341028 (1994-08-01), Yamaguchi et al.
patent: 5612245 (1997-03-01), Saite
patent: 5648673 (1997-07-01), Yasuda
Hu Yong-Jun
Pan Pai-Hung
Meier Stephen
Micro)n Technology, Inc.
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