Compositions and methods for CMP of low-k-dielectric materials

Details Compositions and methods for CMP of low-k-dielectric materials Compositions and methods for CMP of low-k-dielectric materials

2006-11-09

2008-11-25

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S693000, C252S079100, C252S079200, C252S079300, C252S079400

Reexamination Certificate

active

07456107

ABSTRACT:
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.

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