Composition useful for removal of post-etch photoresist and...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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C430S329000, C430S331000, C510S178000

Reexamination Certificate

active

07994108

ABSTRACT:
An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

REFERENCES:
patent: 5972862 (1999-10-01), Torii et al.
patent: 2001/0014534 (2001-08-01), Aoki et al.
patent: 2001/0021488 (2001-09-01), Ichiki
patent: 2002/0128164 (2002-09-01), Hara et al.
patent: 2002/0156148 (2002-10-01), Arase et al.
patent: 2003/0083214 (2003-05-01), Kakizawa et al.
patent: 2004/0180300 (2004-09-01), Minsek et al.
patent: 2004/0224866 (2004-11-01), Matsunaga et al.
patent: 2005/0176603 (2005-08-01), Hsu
patent: 2005/0197265 (2005-09-01), Rath et al.
patent: 407247498 (1995-09-01), None

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