Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-17
2009-06-30
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S126000, C438S197000, C257SE21170, C257SE21006, C257SE21051, C257SE21189, C257SE31126
Reexamination Certificate
active
07553710
ABSTRACT:
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
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European Patent Office Communication dated Apr. 19, 2007 enclosing European Search Report for Samsung Electronics Co., Ltd., Application No. 05108755-9-1226.
Huh Soon-Beom
Jeong Jong-Hyun
Kim Byung-Uk
Kim Seong-Bae
Kim Wy-Yong
F. Chau & Associates LLC.
Nhu David
Samsung Electronics Co,. Ltd.
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