Composition for removing photoresist and method of forming a...

Details Composition for removing photoresist and method of forming a... Composition for removing photoresist and method of forming a...

2007-02-27

2007-02-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C257SE21255, C257SE21508

Reexamination Certificate

active

10858472

ABSTRACT:
A passivation layer pattern having an opening is formed on a substrate having a metal wiring pattern formed thereon. The opening partially exposes an upper surface of the metal wiring pattern. A photoresist pattern is formed on the passivation layer pattern. The photoresist pattern has an opening that exposes the opening of the passivation layer pattern, and metal is electroplated in the openings to form a bump electrode. The photoresist pattern is removed using a composition including monoethanolamine and dimethylacetamide.

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patent: 5171711 (1992-12-01), Tobimatsu
patent: 5798323 (1998-08-01), Honda et al.
patent: 2005/0101500 (2005-05-01), Baik et al.
patent: 9-283508 (1997-10-01), None
patent: 1020010067436 (2001-07-01), None
patent: 2001-80865 (2001-08-01), None
patent: 10-0360985 (2002-10-01), None

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