Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S192000, C257SE21170, C257SE21051, C257SE21189, C257SE21259, C257SE21268, C257SE21278, C257SE21293, C257SE21527
Reexamination Certificate
active
07956393
ABSTRACT:
A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
REFERENCES:
patent: 5561105 (1996-10-01), Honda
patent: 6274296 (2001-08-01), Chu
patent: 6379875 (2002-04-01), Chu
patent: 6916772 (2005-07-01), Zhou et al.
patent: 7144848 (2006-12-01), Zhou et al.
Choi Young-Joo
Choung Jong-Hyun
Hong Sun-Young
Huh Soon-Beom
Jang Doo-Young
Innovation Counsel LLP
Nhu David
Samsung Electronics Co,. Ltd.
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