Composition for forming low dielectric thin film including...

Details Composition for forming low dielectric thin film including... Composition for forming low dielectric thin film including...

2008-03-04

2008-03-04

Zimmer, Marc S. (Department: 1712)

Coating processes

With post-treatment of coating or coating material

Heating or drying

C427S096100, C427S098400, C427S373000, C428S447000, C524S858000, C524S860000, C528S035000, C528S037000

Reexamination Certificate

active

07338689

ABSTRACT:
Disclosed herein is a composition for forming a low dielectric thin film, which includes silane monomers having only any one of stereoisomer, or a siloxane polymer produced by polymerizing the monomers, and a method of producing the low dielectric thin film using the same. When using the composition, mechanical properties are excellent because tacticity of a matrix is improved, and formation of pores is increased due to a molecular free volume, thus it is possible to produce a low dielectric thin film having low dielectricity.

REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 4399266 (1983-08-01), Matsumura et al.
patent: 4999397 (1991-03-01), Weiss et al.
patent: 5965679 (1999-10-01), Godschalx et al.
patent: 6093636 (2000-07-01), Carter et al.
patent: 6107357 (2000-08-01), Hawker et al.
patent: 6204202 (2001-03-01), Leung et al.
patent: 6231989 (2001-05-01), Chung et al.
patent: 6406794 (2002-06-01), Shiota et al.
patent: 6413882 (2002-07-01), Leung et al.
patent: 6423770 (2002-07-01), Katz
patent: 2005/0287818 (2005-12-01), Hata et al.
O. Shchegolokhina et al., “Synthesis and Properties of Stereoregular Cyclic Polysilanols: cis-[PhSi(O)OH]4rcis-[PhSi(O)OH]6rand Tris-cis-tris-trans-[PhSi(O)OH]12”, Inorganic Chemistry, 2002, vol. 41, No. 25, pp. 6892-6904.
T. Kudo et al., “Exploring the Mechanism for the Synthesis of Silsesquioxanes. 3. The Effect of Substituents and Water.” J.Phys Chem. A 2002, vol. 106, No. 46, p. 11347-11353.

Affiliated with

Also associated with

Rating

Composition for forming low dielectric thin film including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composition for forming low dielectric thin film including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition for forming low dielectric thin film including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2815909