Composition for a bottom-layer resist

Details Composition for a bottom-layer resist Composition for a bottom-layer resist

2008-01-01

2008-01-01

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S273100, C430S286100

Reexamination Certificate

active

07314702

ABSTRACT:
A composition for a bottom-layer resist, having superior anti-refractivity and dry-etch resistance for use in a bi-layer resist process employing a light source at a wavelength of 193 nm or below, is disclosed. The composition for the bottom-layer resist contains a polymer represented by formula 1:In formula 1, R is hydrogen or a methyl group, m/(m+n) is about 0.5 to about 1.0 and n/(m+n) is 0 to about 0.5.

REFERENCES:
patent: 4532005 (1985-07-01), Grieco et al.
patent: 4551508 (1985-11-01), Urasaki
patent: 5290882 (1994-03-01), Shiobara et al.
patent: 5798422 (1998-08-01), Karasawa et al.
patent: 5932389 (1999-08-01), Zampini
patent: 6127087 (2000-10-01), Kobayashi et al.
patent: 6207789 (2001-03-01), Sue et al.
patent: 6329492 (2001-12-01), Sue et al.
patent: 6384103 (2002-05-01), Arano et al.
patent: 6392003 (2002-05-01), Kiuchi et al.
patent: 6451503 (2002-09-01), Thackeray et al.
patent: 6472128 (2002-10-01), Thackeray et al.
patent: 6506533 (2003-01-01), Kottmair et al.
patent: 6713589 (2004-03-01), Sue et al.
patent: 6777161 (2004-08-01), Yasunami et al.
patent: 2002/0119392 (2002-08-01), Oda et al.
patent: 2003/0129505 (2003-07-01), Shiraishi et al.
patent: 2003/0165779 (2003-09-01), Kottmair et al.
patent: 2004/0146800 (2004-07-01), Watanabe et al.
patent: 2004/0241577 (2004-12-01), Hatakeyama et al.
patent: 2004/0259037 (2004-12-01), Hatakeyama et al.
patent: 2005/0008965 (2005-01-01), Tao et al.
patent: 09127691 (1997-05-01), None
patent: 11143067 (1999-05-01), None
patent: 2002014474 (2002-01-01), None
English language abstract of JP 09-127691.
Englush Language machine translation of JP 2002-14474.

Affiliated with

Also associated with

Rating

Composition for a bottom-layer resist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composition for a bottom-layer resist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition for a bottom-layer resist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2816101