Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-04-12
2005-04-12
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S710000, C526S251000, C526S250000
Reexamination Certificate
active
06878641
ABSTRACT:
Precursor compositions for the CVD formation of low k dielectric films on a substrate, e.g., as an interlayer dielectric for fabrication of microelectronic device structures. The precursor composition includes a gaseous mixture of (i) at least one aromatic compound, (ii) an inert carrier medium and (iii) optionally at least one unsaturated constituent that is ethylenically and/or acetylenically unsaturated The unsaturated constituent can include either (a) a compound containing ethylenic unsaturation and/or acetylenic unsaturation, or (b) an ethylenically unsaturated and/or acetylenically unsaturated moiety of the aromatic compound (i) of the precursor composition. The low k dielectric film material may be usefully employed in integrated circuitry utilizing copper metallization, to achieve low RC time constants and superior microelectronic device performance.
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Advanced Technology & Materials Inc.
Chappuis Margaret
Hultquist, Esq. Steven
Luk Olivia
Niebling John F.
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