Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-04-01
2008-04-01
Tran, Binh X. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C252S079500
Reexamination Certificate
active
11233110
ABSTRACT:
A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.
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Castillo, II Daniel Hernandez
Compton Timothy Frederick
Richards Robin Edward
Siddiqui Junaid Ahmed
Chase Geoffrey L.
DuPont Air Products Nanomaterials LLC
Tran Binh X.
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