Composite memory material comprising a mixture of phase-change m

Details Composite memory material comprising a mixture of phase-change m Composite memory material comprising a mixture of phase-change m

1996-10-28

1998-10-20

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 4, 257 5, 257 77, 365163, H01L 4700

Patent

active

058250468

ABSTRACT:
A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3483110 (1969-12-01), Rozgonyi
patent: 3530441 (1970-09-01), Ovshinsky
patent: 3810128 (1974-05-01), Moser
patent: 5154957 (1992-10-01), Yamada et al.
patent: 5255260 (1993-10-01), Yamada et al.

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