Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-18
2008-09-09
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S666000, C438S787000, C257S758000, C257S759000, C257SE21273, C257SE21576, C257SE21581
Reexamination Certificate
active
07422975
ABSTRACT:
A method is provided for making an inter-level dielectric for a microelectronic device formed on a substrate. The method begins by forming first and second spacer layers over a substrate layer. The spacer layers are formed from a sacrificial dielectric material. Next, first and second dielectric layers are formed on the first and second spacer layers, respectively, such that each of the first and second dielectric layers is separated by one of the spacer layers. The first and second dielectric layers each include a first and second dielectric component. The second dielectric component is a sacrificial dielectric material. At least a portion of the second dielectric component is removed to thereby form voids in the first and second dielectric layers. At least a portion of the sacrificial dielectric material in the first and second spacer layers is also removed to thereby form voids in the first and/or second spacer layers.
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Ida Kensaku
Nogami Takeshi
Lebentritt Michael S
Mayer & Williams PC
Mayer, Esq. Stuart H.
Sony Electronics Inc.
Williams Esq. Karin L.
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