Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-15
2005-02-15
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000
Reexamination Certificate
active
06855972
ABSTRACT:
A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.
REFERENCES:
patent: 5909033 (1999-06-01), Koga et al.
“Room-Temperature Epitaxial Growth of CeO2Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface” Yoshimoto et al., Japan Journal Applied Physics, vol. 34, pp. L688-L690, Jun. 1, 1995.
“Crystalline Oxides on Silicon: The First Five Monolayers.” McKee et al., Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998.
Chikyow Toyohiro
Kawasaki Masashi
Koinuma Hideomi
Konishi Yoshinori
Yonezawa Yoshiyuki
Fuji Electric Corporate Research and Development
National Institute for Materials Science
Nguyen Cuong
Schneller Marina V.
Tokyo Institute of Technology
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