Composite integrated circuit and its fabrication method

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S532000

Reexamination Certificate

active

06855972

ABSTRACT:
A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

REFERENCES:
patent: 5909033 (1999-06-01), Koga et al.
“Room-Temperature Epitaxial Growth of CeO2Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface” Yoshimoto et al., Japan Journal Applied Physics, vol. 34, pp. L688-L690, Jun. 1, 1995.
“Crystalline Oxides on Silicon: The First Five Monolayers.” McKee et al., Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998.

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