Composite flip chip semiconductor device with an interposer havi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257774, 257747, 361725, 361714, 361749, H01L 2348, H01L 2302, H02B 100, H05K 100

Patent

active

052586480

ABSTRACT:
A composite flip chip semiconductor device (10) permits burn-in testing and rework to be performed on the device while also enhancing electrical, thermal, and mechanical device performance. The device includes a semiconductor die (12) having a plurality of bonding pads (14). Also included in the composite device is an interposer (22) having a first surface with a plurality of traces (26). A plurality of vias (24) extend from the first surface of the interposer (22) to a second surface. The semiconductor die (12) is electrically coupled to the plurality of vias of the interposer which in turn is to be coupled to a substrate.

REFERENCES:
patent: 4074342 (1978-02-01), Honn et al.
patent: 4202007 (1980-05-01), Dougherty et al.
patent: 4825284 (1989-04-01), Soga et al.
patent: 4893174 (1990-01-01), Yamada et al.
patent: 4954878 (1990-09-01), Fox et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Composite flip chip semiconductor device with an interposer havi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite flip chip semiconductor device with an interposer havi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite flip chip semiconductor device with an interposer havi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1759819

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.