Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-01-24
2006-01-24
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000
Reexamination Certificate
active
06989335
ABSTRACT:
A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.
REFERENCES:
patent: 6660660 (2003-12-01), Haukka et al.
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2004/0043149 (2004-03-01), Gordon
U.S. Appl. No. 09/881,408, filed Jun. 2001, Ahn et al.
U.S. Appl. No. 10/163,481, filed Jun. 2002, Ahn et al.
G.D. Wilk, et al, “High-k gate dielectric: Current status and materials properties considerations”, May 2001, Journal of Applied Physics, vol. 89, No. 10, pp. 5243-5275.
Nieminen. M. et al, “Formation and stability of Lanthanum oxide thin films deposited from β-diketonate precursor”, Jan. 2001. Applied Surface Science, vol. 174, No. 2, pp. 155-165.
H. Ibegazene, et al, “Yuria-stabilized hafnia-zirconia thermal barrier coatings: the influence of hafnia addition on TBC structure and high-temperature behaviour”, 1995, Journal of Materials Science 30, pp. 938-951.
J. Wang, et al, “Hafnia and hafnia-toughened ceramics”, 1992, Journal of Materials Science, 27, pp. 5397-5430.
J.M. Leger, et al, “Materials potentially harder than diamond: Quenchable high-pressure phases of transition metal dioxides”, 1994. Journal of Materials Science Letters 13, pp. 1688-1690.
J.M. Leger, et al Pressure-induced phase transitions and volume changes in HIO, up to 50 GPA, Jun. 1993, Physica Review B, vol. 48, No. 1, pp. 93-98.
I.A. El-Shanshoury, et al, “Polymorphic Behavior of Thin Evaporated Films of Zirconium ansd Hafnium Oxides”, Aug. 1969, Journal of The American Ceramic Society, vol. 53, No. 5, pp. 264-268.
M. Ritala, et al, “Development of crystallinty and morphology in hafnium dioxide thin films grown by atomic layer epitaxy”, Apr. 1994, Thin Solid Films, 250, pp. 72-80.
K. Kukli, et al, “Tailoring the dielectric properties of HfO2—Ta2O5nonolaminates”, Apr. 1996, Applied Phys. Letters 68, pp. 3737-3739.
J. Aarik, et al, “Influence of substrate temperature on atomic layer growth and properties of HfO2think films”, Aug. 1998, Thin Solid Films 340, pp. 110-116.
T. Suntola, “Atomic Layer Epitaxy”, Apr. 1989, Materials Science Reports 4, pp. 261-312.
M. Ritala, et al, “Perfectly Conformal TiN and Al2O3Films Deposited by Atomic Layer Deposition”, 1999, Chemical Vapor Deposition, pp. 5-7.
K. Kukli, et al, “Properties of Ta2O5-Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy”, Jan. 1997, J.Electrochem.Soc., vol. 144, No. 1, pp. 300-306.
J. Aarik, et al “Effects of growth conditions on formation of TiO2-II thin films in atomic layer deposition process”, Apr. 1997, J. Crystal Growth 181, pp. 259-264.
K. J. Eisentraut and R.E. Stevers, “Volatile Rare Earth Chelates”, Nov. 1965, Journal of the American Chemical Society, 87:22, pp. 5254-5256.
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Sarkar Asok Kumar
Wells St. John P.S.
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