Composite dielectric forming methods and composite dielectrics

Details Composite dielectric forming methods and composite dielectrics Composite dielectric forming methods and composite dielectrics

2005-11-01

2005-11-01

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000

Reexamination Certificate

active

06960538

ABSTRACT:
A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.

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